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STN1810 参数 Datasheet PDF下载

STN1810图片预览
型号: STN1810
PDF下载: 下载PDF文件 查看货源
内容描述: STN1810是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。 [STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 966 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN1810
N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN1810 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance and provide superior
switching performance. These applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-
line power loss and resistance to transients are melded.
PIN CONFIGURATION
SOP-8
FEATURE
60V/8.0A, R
DS(ON)
= 140m (Typ.)
@V
GS
= 10V
60V/6.5.0A, R
DS(ON)
= 150m
@V
GS
= 7.0V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1