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STN4392 参数 Datasheet PDF下载

STN4392图片预览
型号: STN4392
PDF下载: 下载PDF文件 查看货源
内容描述: STN4392是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。 [STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 383 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN4392
STN439
392
N Channel Enhancement Mode MOSFET
13A
DESCRIPTION
STN4392 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
½
½
½
½
½
30V/13A, R
DS(ON)
= 8mΩ (Typ.)
@V
GS
= 10V
30V/10A, R
DS(ON)
= 12mΩ
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
STN4392
YA
Year
Y
:Year
Code
Process
A
:Process
Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4392 2009. V1