STN4392
STN439
392
N Channel Enhancement Mode MOSFET
13A
DESCRIPTION
STN4392 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
½
½
½
½
½
30V/13A, R
DS(ON)
= 8mΩ (Typ.)
@V
GS
= 10V
30V/10A, R
DS(ON)
= 12mΩ
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
STN4392
YA
Year
Y
:Year
Code
Process
A
:Process
Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4392 2009. V1