STN4438
N Channel Enhancement Mode MOSFET
8.2A
DESCRIPTION
STN4438 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
FEATURE
l
l
l
l
l
60V/8.2A, R
DS(ON)
= 25mΩ (Typ.)
@V
GS
= 10V
60V/7.6A, R
DS(ON)
= 30mΩ
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PIN CONFIGURATION
SOP-8
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2008, Stanson Corp.
STN4438 2009. V1
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