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STN4488L 参数 Datasheet PDF下载

STN4488L图片预览
型号: STN4488L
PDF下载: 下载PDF文件 查看货源
内容描述: STN4488L是其中使用的是高细胞密度的DMOS沟道技术制备的N沟道逻辑增强型功率场效应晶体管。 [STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 644 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN4488L
N Channel Enhancement Mode MOSFET
20.0A
DESCRIPTION
STN4488L is the N-Channel logic enhancement mode power field effect transistors
which are produced using high cell density DMOS trench technology. It is suitable for
the power management applications in the portable or battery powered system.
PIN CONFIGURATION
SOP-8
FEATURE
30V/20A, R
DS(ON)
= 3.8m (Typ.)
@VGS = 10V
30V/18A, R
DS(ON)
= 5.2m
@VGS = 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
Y:Year Code
A: Week Code
M: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4488L 2009. V1