N Channel Enhancement Mode MOSFET
STN4412
6.8A
DESCRIPTION
STN4412 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
FEATURE
30V/6.8A, R
DS(ON)
= 28mΩ
@V
GS
= 10V
30V/5.6A, R
DS(ON)
= 36mΩ
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
STN4412
SYA
ORDERING INFORMATION
Part Number
STN4412S8RG
STN4412S8TG
Package
SOP-8P
SOP-8P
Part Marking
STN4412
STN4412
※
Process Code : A ~ Z ; a ~ z
※
STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1