STN4920
Dual N Channel Enhancement Mode MOSFET
7.2A
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VDS=VGS,ID=250 uA
30
V
V
Gate Threshold Voltage
1.0
3.0
±
±
100
VDS=0V,VGS= 20V
Gate Leakage Current
nA
VDS=30V,VGS=0V
VDS=30V,VGS=0V
1
5
IDSS
TJ=55
Zero Gate Voltage Drain
Current
℃
uA
A
On-State Drain Current
ID(on)
V
DS≥5V,VGS=4.5V
20
=
VGS 10V, ID=7.2A
0.022 0.028
0.030 0.036
Ω
Drain-source On-Resistance
RDS(on)
=4
VGS .5V, ID=6.0A
Forward Tran Conductance
Diode Forward Voltage
Dynamic
VDS=15.0V,ID=6.2A
IS=2.3A,VGS=0V
13
S
V
g
fs
VSD
0.8
1.2
Total Gate Charge
Qg
Qgs
Qgd
30
7.5
3.5
VDS=15V,VGS=10V
ID=7.2A
Gate-Source Charge
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
Coss
Crss
450
240
38
VDS=15.0V,VGS=0V
f=1MHz
Output Capacitance
Reverse TransferCapacitance
12
20
td(on)
Turn-On Time
Turn-Off Time
Ω
VDD=15V,RL=15
tr
10
60
15
20
90
30
ID=1A,VGEN=10V
nS
Ω
RG=6
td(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4920 2007. V1
STANSON [ STANSON TECHNOLOGY ]
