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STN4972S8TG 参数 Datasheet PDF下载

STN4972S8TG图片预览
型号: STN4972S8TG
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型MOSFET [Dual N Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 7 页 / 418 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
DESCRIPTION
STN4972 is the Dual N-Channel logic enhancement mode power field effect
transistors which are produced using high cell density DMOS trench technology. It is
suitable for the power management applications in the portable or battery powered
system.
PIN CONFIGURATION
SOP-8
FEATURE
30V/8.5A, R
DS(ON)
= 14mΩ@VGS = 10V
30V/7.8A, R
DS(ON)
= 18mΩ@VGS = 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
STN4972S8RG
STN4972S8TG
Package
SOP-8
SOP-8
Part Marking
STN4972
STN4972
Process Code : A ~ Z ; a ~ z
STN9972S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STN9972S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1