STN6303
Dual N Channel Enhancement Mode MOSFET
1.0A
DESCRIPTION
STN6303 is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer circuits where high-side switching, low in-line power loss and
resistance to transients are needed.
PIN CONFIGURATION
SOT-363 / SC70-6L
D1
G2
S2
FEATURE
23V/0.5A, R
DS(ON)
= 400m-ohm@V
GS
=4.5V
23V/0.75A, R
DS(ON)
=550m-ohm@V
GS
=2.5V
Super high density cell design for extremely
low R
DS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-363 / SC70-6L package design
53YW
S1
G
D2
Y: Year
W: Process Code
ORDERING INFORMATION
Part Number
STN6303
Package
SOT-363 / SC70-6L
Part Marking
53
※
Process Code : A ~ Z(1~26) ; a ~ z(27~52)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN6303 2008. V1