Dual N Channel Enhancement Mode MOSFET
STN8205AA
6.0A
DESCRIPTION
STN8205AA is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSSOP-8
D2
8
S2
7
S2
6
G2
5
FEATURE
20V/6.0A, R
DS(ON)
= 30m-ohm@V
GS
=4.5V
20V/5.0A, R
DS(ON)
=42m-ohm@V
GS
=2.5V
Super high density cell design for extremely
low R
DS(ON)
Exceptional low on-resistance and maximum
DC current capability
TSSOP-8 package design
STN8205AA
SYA
1
D1
2
S1
3
S1
4
G1
S：Subcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
STN8205AAST8RG
Package
TSSOP-8
Part Marking
SYA
※
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※
ST8205AAST8RG
ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205AA 2007. V1
STANSON [ STANSON TECHNOLOGY ]
