Dual N Channel Enhancement Mode MOSFET
STN8205D
5.0A
DESCRIPTION
STN8205D is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSOP-6
G1
D
G2
FEATURE
20V/4.0A, R
DS(ON)
= 30m-ohm@V
GS
=4.5V
20V/3.4A, R
DS(ON)
=42m-ohm@V
GS
=2.5V
Super high density cell design for extremely
low R
DS(ON)
Exceptional low on-resistance and maximum
DC current capability
TSOP-6 package design
STN8205
SYA
S1
D
S2
S：Subcontractor
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
STN8205DST6RG
Package
TSOP-6
Part Marking
SYA
※
Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
※
ST8205DST6RG
ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1
STANSON [ STANSON TECHNOLOGY ]
