P Channel Enhancement Mode MOSFET
STP3481
-5.2A
※
STP3481S6RG
S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free
ABSOULTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150
℃
)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70
℃
T
A
=25℃
T
A
=70
℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
-30
±
20
-5.2
-4.2
-20
-1.7
2.0
1.3
150
-55/150
90
Unit
V
V
A
A
A
W
℃
℃
℃
/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1