P Channel Enhancement Mode MOSFET
-
10A
DESCRIPTION
STP4435A is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
STP4435A
PIN CONFIGURATION
SOP-8
FEATURE
-30V/-9.2A, R
DS(ON)
= 22mΩ (Typ.)
@V
GS
=-10V
-30V/-7.0A, R
DS(ON)
= 30mΩ
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435A 2007. V1