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STP4803 参数 Datasheet PDF下载

STP4803图片预览
型号: STP4803
PDF下载: 下载PDF文件 查看货源
内容描述: STP4803是采用高密度, DMOS沟槽技术生产的双P沟道逻辑增强型功率场效应晶体管。 [STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 697 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2A
DESCRIPTION
STP4803 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
FEATURE
½
½
½
½
½
-30V/-5.2A, R
DS(ON)
= 38mΩ (Typ.)
@V
GS
=-10V
-30V/-4.0A, R
DS(ON)
= 52mΩ
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
STP4803
Process Code : A ~ Z ; a ~ z
Package
SOP-8
Part Marking
STP4803
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1