STP4925
P Dual Channel Enhancement Mode
MOSFET
-
7.2A
DESCRIPTION
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
FEATURE
-30V/-7.2A, R
DS(ON)
= 20m (Typ.)
@V
GS
=-10V
-30V/-5.6A, R
DS(ON)
= 25m
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4925 2007. V1