欢迎访问ic37.com |
会员登录 免费注册
发布采购

STP4925 参数 Datasheet PDF下载

STP4925图片预览
型号: STP4925
PDF下载: 下载PDF文件 查看货源
内容描述: STP4925是采用高密度, DMOS沟槽技术生产的双P沟道逻辑增强型功率场效应晶体管。 [STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 6 页 / 577 K
品牌: STANSON [ STANSON TECHNOLOGY ]
 浏览型号STP4925的Datasheet PDF文件第2页浏览型号STP4925的Datasheet PDF文件第3页浏览型号STP4925的Datasheet PDF文件第4页浏览型号STP4925的Datasheet PDF文件第5页浏览型号STP4925的Datasheet PDF文件第6页  
STP4925
P Dual Channel Enhancement Mode
MOSFET
-
7.2A
DESCRIPTION
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
FEATURE
-30V/-7.2A, R
DS(ON)
= 20m (Typ.)
@V
GS
=-10V
-30V/-5.6A, R
DS(ON)
= 25m
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4925 2007. V1