STP4931
STP4931
Dual P Channel Enhancement Mode MOSFET
-
8.5A
DESCRIPTION
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors
are produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, notebook computer power management
and other battery powered circuits Where hight-side switching.
PIN CONFIGURATION
SOP-8
FEATURE
½
½
½
½
½
½
PART MARKING
SOP-8
-20V/-8.5A, R
DS(ON)
= 20mΩ (Typ.)
@V
GS
=-4.5V
-20V/-8.0A, R
DS(ON)
= 25mΩ
@V
GS
= -2.5V
-20V/-5.0A, R
DS(ON)
= 35mΩ
@V
GS
= -1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4931 2009. V1
STANSON [ STANSON TECHNOLOGY ]
