STP4953
Dual P Channel Enhancement Mode MOSFET
-
5.2A
DESCRIPTION
STP4953 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
FEATURE
�½
�½
�½
�½
�½
�½
-30V/-5.2A, R
DS(ON)
= 60mΩ
@V
GS
=-10V
-30V/-4.5A, R
DS(ON)
= 80mΩ
@V
GS
= -6.0V
-30V/-3.8A, R
DS(ON)
= 90mΩ
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
STP4953S8RG
STP4953S8TG
Package
SOP-8
SOP-8
Part Marking
STP4953
STP4953
※
Process Code : A ~ Z ; a ~ z
※
STP4953S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※
STP4953S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4953 2007. V1
STANSON [ STANSON TECHNOLOGY ]
