STU3N45K3
N-channel 450 V - 3.3
Ω
typ., 1.8 A Zener-protected
SuperMESH3™ Power MOSFET in a IPAK package
Datasheet
-
production data
Features
Order code
TAB
V
DSS
450 V
R
DS(on)
max
<4
Ω
I
D
1.8 A
P
w
27 W
STU3N45K3
3
2
1
•
100% avalanche tested
•
Extremely high dv/dt capability
•
Gate charge minimized
•
Very low intrinsic capacitance
•
Improved diode reverse recovery
characteristics
IPAK
Figure 1. Internal schematic diagram
D(2, TAB)
•
Zener protected
Applications
•
Switching applications
Description
G(1)
S(3)
AM01476v1
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
Table 1.Device summary
Order code
STU3N45K3
Marking
3N45K3
Package
IPAK
Packaging
Tube
June 2013
This is information on a product in full production.
DocID17206 Rev 3
1/14
STATEK [ STATEK CORPORATION ]
