1N582x
Fig. 2-1: Average forward current versus ambient
temperature (δ=0.5) (1N5820/1N5821).
Fig. 2-2: Average forward current versus ambient
temperature (δ=0.5) (1N5822).
IF(av)(A)
IF(av)(A)
3.5
3.5
Rth(j-a)=Rth(j-l)=25°C/W
Rth(j-a)=Rth(j-l)=25°C/W
3.0
2.5
3.0
2.5
2.0
2.0
Rth(j-a)=80°C/W
Rth(j-a)=80°C/W
1.5
1.5
1.0
1.0
T
T
0.5
0.5
tp
=tp/T
δ
Tamb(°C)
tp
=tp/T
δ
Tamb(°C)
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Fig. 3-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).
Fig. 3-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).
IM(A)
IM(A)
16
12
11
10
9
8
7
14
12
Ta=25°C
Ta=25°C
10
Ta=75°C
8
6
Ta=75°C
5
4
3
6
Ta=100°C
Ta=100°C
4
IM
IM
2
1
0
2
t
t
δ
=0.5
t(s)
δ
=0.5
t(s)
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
Zth(j-a)/Rth(j-a)
600
1.0
F=1MHz
Tj=25°C
1N5820
0.8
1N5821
1N5822
0.6
100
δ = 0.5
0.4
T
δ = 0.2
0.2
δ = 0.1
tp
=tp/T
Single pulse
δ
tp(s)
1E+1
VR(V)
0.0
10
1E-1
1E+0
1E+2
1E+3
1
2
5
10
20
40
3/5
STMICROELECTRONICS [ ST ]
