2STC4468
High power NPN epitaxial planar bipolar transistor
General features
■
■
■
■
■
Preliminary data
High breakdown voltage V
CEO
=140V
Complementary to 2STA1695
Fast-switching speed
Typical f
t
=20MHz
Fully characterized at 125
o
C
3
2
1
Applications
■
Audio power amplifier
TO-3P
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows
good
gain
linearity
behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number
2STC4468
Marking
2STC4468
Package
TO-3P
Packaging
Tube
Electrical ratings
June 2007
Rev 1
1/9
9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STMICROELECTRONICS [ STMICROELECTRONICS ]
