STB70NFS03L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D
I
D
I
DM (1)
P
TOT
Mosfet absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
30
± 18
70
50
280
100
0.67
5.5
500
-55 to 175
Operating junction temperature
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
dv/dt
(2)
Peak diode recovery voltage slope
E
AS (3)
T
stg
T
J
Single pulse avalanche energy
Storage temperature
1. Pulse width limited by safe operating area
2. I
SD
< 70A, di/dt < 350A/µs, V
DD
= 80% V
(BR)DSS
3. Starting Tj = 25°C, V
DD
= 25V
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
dv/dt
Schottky absolute maximum ratings
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Critical rate of rise of reverse voltage
T
L
=125°C
δ=0.5
tp=10ms
Sinusoidal
Value
30
20
3
75
10000
Unit
V
A
A
A
v/µs
Table 3.
Symbol
Thermal data
Parameter
Value
1.5
62.5
300
Unit
°C/W
°C/W
°C
Rthj-amb Thermal resistance junction-amb max
Rthj-case Thermal resistance junction-case max
T
l
Maximum lead temperature for soldering purpose
3/13
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