BC857
BC858
SMALL SIGNAL PNP TRANSISTORS
Type
BC857A
BC857B
BC858A
BC858B
s
Marking
3E
3F
3J
3K
2
3
1
s
s
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
VERY LOW NOISE AF AMPLIFIER
NPN COMPLEMENTS FOR BC857 IS BC847
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
I
EM
P
t ot
T
stg
T
j
Parameter
BC857
Collector-Emitter Voltage (V
BE
= 0)
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Peak Current
Emitter Peak Current
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. O perating Junction Temperature
o
Value
BC858
-30
-30
-30
-5
-0.1
-0.2
-0.2
-0.2
300
-65 to 150
150
-50
-50
-45
Uni t
V
V
V
V
A
A
A
A
mW
o
o
C
C
October 1997
1/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
