®
BDX53B / BDX53C
BDX54B / BDX54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
APPLICATIONS
s
AUDIO AMPLIFIERS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54C respectively.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 KΩ
R
2
Typ. = 150
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
s tg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
T otal Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
BDX53B
BDX54B
80
80
5
8
12
0.2
60
-65 to 150
150
Value
BDX53C
BDX54C
100
100
V
V
V
A
A
A
W
o
o
Un it
C
C
For PNP types voltage and current values are negative.
September 1999
1/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
