BTA20 Series
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125°C
I
T
= 500 mA gate open
I - III
I
G
= 1.2 I
GT
II
I - II - III
dV/dt (2)
V
D
= 67 %V
DRM
gate open
T
j
= 125°C
T
j
= 125°C
Test Conditions
Quadrant
ALL
ALL
ALL
MIN.
MAX.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MIN.
TYP.
MIN.
75
50
90
-
750
500
36
18
BTA20
BW
2
50
1.5
0.2
50
-
-
80
500
250
22
11
V/µs
V/µs
mA
CW
1
35
Unit
mA
V
V
mA
V
D
= 12 V
R
L
= 33
Ω
(dV/dt)c (2) (dI/dt)c = 20 A/ms
Table 5: Static Characteristics
Symbol
V
TM
(2)
I
DRM
I
RRM
I
TM
= 28 A
V
DRM
= V
RRM
Test Conditions
t
p
= 380 µs
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
MAX.
MAX.
Value
1.70
10
3
Unit
V
µA
mA
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to case (DC)
Junction to ambient
Parameter
Value
2.1
°C/W
2.8
60
°C/W
Unit
2/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
