BTA/BTB24, BTA25, BTA26 and T25 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS (3 Quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
Quadrant
T25
BTA/BTB
Unit
T2535
CW
BW
I
(1)
mA
I - II - III
MAX.
35
35
50
GT
V
V
= 12 V
R = 33 Ω
D
D
L
V
V
I - II - III
I - II - III
MAX.
MIN.
1.3
0.2
V
V
GT
= V
R = 3.3 kΩ Tj = 125°C
GD
(2)
DRM
L
I
I = 500 mA
MAX.
MAX.
50
50
75
mA
mA
H
T
I
I
= 1.2 I
GT
I - III
II
70
80
70
80
80
100
1000
22
L
G
dV/dt (2)
V
= 67 % V
gate open Tj = 125°C
Tj = 125°C
MIN.
MIN.
500
13
500
13
V/µs
D
DRM
(dI/dt)c (2) Without snubber
A/ms
■ STANDARD (4 Quadrants): BTA25...B, BTA26...B
Symbol
Test Conditions
Quadrant
Value
Unit
I
(1)
I - II - III
IV
50
100
mA
GT
V
MAX.
V
V
= 12 V
R = 33 Ω
D
D
L
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
GT
V
= V
R = 3.3 kΩ Tj = 125°C
GD
DRM
L
I
(2)
I = 500 mA
MAX.
MAX.
80
70
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
G
GT
L
160
500
10
dV/dt (2)
V
= 67 % V
gate open Tj = 125°C
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 13.3 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Value
Unit
I
= 35 A
tp = 380 µs
MAX.
MAX.
MAX.
1.55
V
V
(2)
(2)
TM
TM
V
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.85
16
5
V
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
DRM RRM
DRM
RRM
MAX.
3
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/9
STMICROELECTRONICS [ ST ]
