®
BUL1203E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203E is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
FE
range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
TO-220
3
1
2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-BaseVoltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
1200
1200
550
9
5
8
2
4
100
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
o
o
C
C
1/7
December 2003
STMICROELECTRONICS [ STMICROELECTRONICS ]
