®
BUX87
HIGH VOLTAGE NPN
SILICON POWER TRANSISTOR
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY (450V V
CEO
)
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
HIGH DC CURRENT GAIN
1
APPLICATIONS
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUX87 is manufactured using High Voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
SOT-32
3
2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
1000
450
5
0.5
1
0.3
0.6
40
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
September 2003
1/5
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