ESDAxxL
Fig. 1:
Peak power dissipation versus initial junc-
tion temperature.
Fig. 2:
Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C).
Ppp[Tj initial]/Ppp[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
3000
1000
Ppp(W)
100
Tj initial(°C)
0
25
50
75
100
125
150
10
1
tp(µs)
10
100
Fig. 3:
Clamping voltage versus peak pulse cur-
rent (Tj initial = 25 °C).
Rectangular waveform tp = 2.5
µs.
Fig. 4:
Capacitance versus reverse applied volt-
age (typical values).
Ipp(A)
50.0
10.0
ESDA5V3L
C(pF)
200
ESDA6V1L
ESDA14V2L
ESDA25L
ESDA5V3L
F=1MHz
Vosc=30mV
100
ESDA6V1L
50
1.0
tp=2.5µs
ESDA14V2L
20
VR(V)
10
1
2
5
10
20
ESDA25L
Vcl(V)
0.1
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
50
Fig. 5:
Relative variation of leakage current versus
junction temperature (typical values).
Fig. 6:
Peak forward voltage drop versus peak for-
ward current (typical values).
IR[Tj] / IR[Tj=25°C]
200
100
ESDA6V1L
&
ESDA14V2L
IFM(A)
5.00
Tj=25°C
ESDA5V3L
ESDA14V2L
1.00
ESDA25L
ESDA6V1L
ESDA25L
10
0.10
Tj(°C)
1
25
50
75
100
ESDA5V3L
VFM(V)
125
0.01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
