IRFP250
N-CHANNEL 200V - 0.073Ω - 33A TO-247
PowerMesh™II MOSFET
TYPE
IRFP250
s
s
s
s
s
V
DSS
200V
R
DS(on)
< 0.085Ω
I
D
33 A
TYPICAL R
DS
(on) = 0.073Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
1
3
2
DESCRIPTION
The PowerMESH
™
II is the evolution of the first
generation of MESH OVERLAY
™.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLIES (UPS)
s
DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
s
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
200
200
±20
33
20
132
180
1.44
5
–65 to 150
150
(1)I
SD
≤33A,
di/dt
≤300A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(•)Pulse width limited by safe operating area
Sep 2000
1/8