L4978
Figure 18. Efficiency vs. output current.
.
η
(%)
90
85
80
V
CC
=48V
Io=1.5A
D97IN740
Figure 21. Power dissipation vs. Vcc.
.
Pdiss [mW]
1000
V
CC
=8V
V
CC
=12V
V
CC
=24V
600
Io=1A
Vo=5.1V
fsw=100kHz
800
Io=2A
75
70
65
60
fsw=200KHz
V
O
=5.1V
400
Io=0.5A
200
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 I
O
(A)
0
10
20
30
Vcc [V]
40
50
60
Figure 19. Efficiency vs. output current.
.
η
(%)
90
85
80
75
V
CC
=8V
V
CC
=12V
V
CC
=24V
D97IN741
Figure 22. Device Power dissipation vs. Vo
.
Pdiss [mW]
1400
Vcc=35V
fsw=100kHz
Io=2A
1200
1000
Io=1.5A
800
600
Io=1A
70
65
60
V
CC
=48V
fsw=200KHz
V
O
=3.36V
400
Io=0.5A
200
55
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I
O
(A)
0
0
10
20
Vo [V]
30
Figure 20. Efficiency vs. Vcc.
.
n [%]
90
Vo=5.1V fsw=100kHz
Figure 23. Pulse by pulse limiting current vs.
junction temperature..
Ilim
(A)
2.9
2.8
2.7
2.6
2.5
fsw=100KHz
V
CC
=35V
D97IN747
85
Vo=5.1V fsw=200kHz
Vo=3.36V fsw=100kHz
80
Vo=3.36V fsw=200kHz
75
Io=2A
2.4
70
0
10
20
30
Vcc [V]
40
50
60
2.3
-50 -25
0
25
50
75 100 125 Tj(˚C)
8/13
STMICROELECTRONICS [ STMICROELECTRONICS ]
