L6506 -L6506D
PIN CONNECTIONS
(top view)
DIP18
SO20
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
i
P
tot
T
j
T
stg
Supply Voltage
Input Signals
Total Power Dissipation (T
amb
= 70°C) for DIP18
Total Power Dissipation (Tamb = 70ÉC)
for SO20
Junction Temperature
Storage Temperature
Parameter
Value
10
7
1
0.8
150
-40 to 150
Unit
V
V
W
W
°C
°C
THERMAL DATA
Symbol
R
th j-amb
Parameter
Thermal Resistance Junction-ambient
Max.
DIP18
80
SO20
100
Unit
°C/W
ELECTRICAL CHARACTERESTICS
(V
CC
= 5.0V, T
amb
= 25°C; unless otherwise noted)
Symbol
V
CC
I
CC
Parameter
Supply Voltage
Quiescent Supply Current
Test Conditions
V
CC
= 7V
Min.
4.5
Typ.
Max.
7
25
Unit
V
mA
COMPARATOR SECTION
Symbol
V
IN
V
IO
I
IO
I
IB
Parameter
Input Voltage Range
Input Offset Voltage
Input Offset Current
Input Bias Current
Response time
V
REF
= 1.4V V
SENS
= 0 to 5V
0.8
Test Conditions
V
sense
Inputs
V
IN
= 1.4V
Min.
–0.3
Typ.
Max.
3
±5.0
±200
1
1.5
Unit
V
mV
nA
µA
µs
2/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
