L6561D013TR 参数 Datasheet PDF下载

L6561

Table 2. Absolute Maximum Ratings

Symbol

I

Vcc

I

GD

INV, COMP

MULT

CS

ZCD

P

tot

T

j

T

stg

Pin

8

7

1, 2, 3

4

5

I

q

+ I

Z

; (I

GD

= 0)

Output Totem Pole Peak Current (2µs)

Analog Inputs & Outputs

Current Sense Input

Zero Current Detector

Power Dissipation @T

amb

= 50 °C

Junction Temperature Operating Range

Storage Temperature

(DIP-8)

(SO-8)

Parameter

Value

30

±700

-0.3 to 7

-0.3 to 7

50 (source)

-10 (sink)

1

0.65

-40 to 150

-55 to 150

Unit

mA

mA

V

V

mA

mA

W

W

°C

°C

Figure 3. Pin Connection

(Top view)

INV

COMP

MULT

CS

1

2

3

4

DIP8

8

7

6

5

V

CC

GD

GND

ZCD

Table 3. Thermal Data

Symbol

R

th j-amb

Parameter

Thermal Resistance Junction to ambient

SO 8

150

MINIDIP

100

Unit

°C/W

Table 4. Pin Description

N.

1

2

3

4

5

6

7

8

Name

INV

COMP

MULT

CS

ZCD

GND

GD

V

CC

Function

Inverting input of the error amplifier. A resistive divider is connected between the output

regulated voltage and this point, to provide voltage feedback.

Output of error amplifier. A feedback compensation network is placed between this pin and the

INV pin.

Input of the multiplier stage. A resistive divider connects to this pin the rectified mains. A voltage

signal, proportional to the rectified mains, appears on this pin.

Input to the comparator of the control loop. The current is sensed by a resistor and the resulting

voltage is applied to this pin.

Zero current detection input. If it is connected to GND, the device is disabled.

Current return for driver and control circuits.

Gate driver output. A push pull output stage is able to drive the Power MOS with peak current of

400mA (source and sink).

Supply voltage of driver and control circuits.

(1) Parameter guaranteed by design, not tested in production.

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