M29DW323DT
M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
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Figure 1. Packages
– V
PP
=12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
TSOP48 (N)
12 x 20mm
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MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
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DUAL OPERATIONS
– Read in one bank while Program or Erase in
other
FBGA
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ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TFBGA63 (ZA)
7 x 11mm
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UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and WRITE
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
FBGA
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TFBGA48 (ZE)
6 x 8mm
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LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB: 225Fh
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June 2003
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STMICROELECTRONICS [ STMICROELECTRONICS ]
