STF10N62K3, STFI10N62K3,
STI10N62K3, STP10N62K3
N-channel 620 V, 0.68
Ω
typ., 8.4 A SuperMESH3™
Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages
Datasheet
−
production data
Features
Type
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
1. Limited by package
■
■
■
■
■
■
V
DSS
R
DS(on)
max
I
D
8.4 A
(1)
P
w
3
30 W
TAB
1
2
1
2
3
TO-220FP
TAB
620 V
< 0.75
Ω
8.4 A
125 W
I²PAKFP
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Figure 1.
I²PAK
3
12
3
TO-220
1
2
Internal schematic diagram
Applications
■
Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1.
Device summary
Order codes
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
Marking
10N62K3
10N62K3
10N62K3
10N62K3
Package
TO-220FP
I²PAKFP
Tube
I²PAK
TO-220
Packaging
AM01476v1
September 2012
This is information on a product in full production.
Doc ID 15640 Rev 4
1/17
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