STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015
Ω
- 50A TO-220/TO-220FP/I
²
PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE
STP55NF06
STB55NF06-1
STB55NF06
STP55NF06FP
s
s
s
s
V
DSS
60 V
60 V
60 V
60 V
R
DS(on)
<0.018
<0.018
<0.018
<0.018
Ω
Ω
Ω
Ω
I
D
50 A
50 A
50 A
50 A(*)
TO-220FP
3
1
2
TO-220
1
3
2
s
TYPICAL R
DS
(on) = 0.015
Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “-1")
3
I
²
PAK
TO-262
(Suffix “-1”)
3
12
1
D
²
PAK
TO-263
(Suffix “T4”)
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
to Rth value
INTERNAL SCHEMATIC DIAGRAM
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
STP_B55NF06(-1)
STP55NF06FP
60
60
± 20
50
50(*)
35
35(*)
200
200(*)
110
30
0.73
0.2
7
350
-55 to 175
(2) Starting T
j
= 25
o
C, I
D
= 25A, V
DD
= 30V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(•)
Pulse width limited by safe operating area
(*)
Refer to soa for the max allowable current value on FP-type due
March 2003
.
(1)
I
SD
≤50A,
di/dt
≤400A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
1/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
