STPS2045C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
P
F(AV)
(W)
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
I
F(AV)
(A)
δ
= 0.05
δ
= 0.1
δ
= 0.2
12
δ
= 0.5
10
8
R
th(j-a)
=R
th(j-c)
TO-220AB
D²PAK
TO-220FPAB
δ
=1
R
th(j-a)
=15°C/W
6
4
T
2
T
I
F(AV)
(A)
δ
=tp/T
10
11
tp
0
δ
=tp/T
12
0
25
tp
50
T
amb
(°C)
75
100
125
150
175
Figure 3: Normalized avalanche
derating versus pulse duration
P
ARM
(t
p
)
P
ARM
(1µs)
1
power
Figure 4: Normalized avalanche
derating versus junction temperature
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
power
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, D
2
PAK, I
2
PAK)
I
M
(A)
140
120
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
I
M
(A)
100
80
100
80
T
C
=75°C
60
T
C
=75°C
60
T
C
=100°C
40
T
C
=100°C
I
M
I
M
40
20
0
1E-3
1E-2
1E-1
t
T
C
=125°C
T
C
=125°C
t
20
δ
=0.5
t(s)
0
δ
=0.5
t(s)
1E-2
1E-1
1E+0
1E+0
1E-3
3/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
