STS01DTP06
Table 6: Q2-PNP Transistor Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
CEO
I
EBO
(I
E
= 0)
Collector Cut-off Current
(I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CEO
*
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
CE(sat)
*
V
BE(sat)
*
h
FE
*
Parameter
Collector Cut-off Current
Test Conditions
V
CB
= -60 V
V
CE
= -30 V
V
EB
= -5 V
I
C
= -10 mA
Min.
Typ.
Max.
-0.1
-1
-1
Unit
µA
µA
µA
V
-30
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
C
= -1 A
I
C
= -2 A
I
C
= -1 A
I
C
= -1 A
I
B
= -10 mA
I
B
= -100 mA
I
B
= -10 mA
V
CE
= -2 V
V
CE
= -2 V
100
30
-0.35
-0.85
-1
-0.7
-1.1
V
V
V
I
C
= -3 A
* Pulsed: Pulsed duration = 300
ms,
duty cycle
≤
1.5
%.
Figure 3: Reverse Biased Area Q1 NPN Tran-
sistor
Figure 4: DC Current Gain Q1 NPN Transistor
3/8