TDA2030
THERMAL DATA
Symbol
R
th j-case
Parameter
Thermal resistance junction-case
max
Value
3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Refer to the test circuit, V
s
=
±
14V, T
amb
= 25°C unless otherwise
specified)
Symbol
V
s
I
d
I
b
V
os
I
os
P
o
Parameter
Supply voltage
Quiescent drain current
Input bias current
Input offset voltage
Input offset current
Output power
d = 0.5%
G
v
= 30 dB
f = 40 to 15,000 Hz
R
L
= 4
Ω
R
L
= 8
Ω
d = 10%
f = 1 KHz
R
L
= 4Ω
R
L
= 8
Ω
d
Distortion
G
v
= 30 dB
18
11
W
W
V
s
=
±
18V
Test conditions
Min.
±
6
40
0.2
±
2
±
20
Typ.
Max.
±
18
60
2
±
20
±
200
Unit
V
mA
µ
A
mV
nA
12
8
14
9
W
W
P
o
= 0.1 to 12W
R
L
= 4
Ω
G
v
= 30 dB
f = 40 to 15,000 Hz
P
o
= 0.1 to 8W
R
L
= 8Ω
G
v
= 30 dB
f = 40 to 15,000 Hz
0.2
0.5
%
0.1
10 to 140,000
0.5
5
90
0.5
%
Hz
M
Ω
dB
B
R
i
G
v
G
v
e
N
i
N
SVR
Power Bandwidth
(-3 dB)
Input resistance (pin 1)
Voltage gain (open loop)
Voltage gain (closed loop)
Input noise voltage
Input noise current
Supply voltage rejection
G
v
= 30 dB
P
o
= 12W
R
L
= 4
Ω
f = 1 kHz
B = 22 Hz to 22 KHz
29.5
30
3
80
30.5
10
200
dB
µV
pA
dB
R
L
= 4Ω
G
v
= 30 dB
R
g
= 22 k
Ω
V
ripple
= 0.5 V
eff
f
ripple
= 100 Hz
P
o
= 14W
P
o
= W
R
L
= 4Ω
R
L
= 8Ω
40
50
I
d
T
j
Drain current
Thermal shut-down junction
temperature
900
500
145
mA
mA
°
C
3/11
STMICROELECTRONICS [ STMICROELECTRONICS ]
