GS3AB - GS3MB
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
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!
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Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Low Power Loss
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Built-in Strain Relief
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Plastic
Case
Material
has
UL
Flammability
B
SMB(DO-214AA)
Classification Rating 94V-O
Mechanical Data
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Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
Dim
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
D
J
E
G
H
H
G
E
J
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
GS3AB GS3BB GS3DB GS3GB GS3JB GS3KB GS3MB
Unit
50
35
100
70
200
140
400
280
3.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
100
1.20
5.0
250
2.5
60
13
-65 to +150
A
V
µA
µS
pF
°C/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
1 of 2
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