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US3G PDF Datasheet浏览和下载

型号.:
US3G
PDF下载:
下载PDF文件
内容描述:
[3.0A patch fast recovery diode 400V SMC series]
文件大小:
392 K
文件页数:
2 Pages
品牌Logo:
品牌名称:
SUNMATE [ SUNMATE electronic Co., LTD ]
PCB Prototype
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 浏览型号US3G的Datasheet PDF文件第2页 
US3A - US3M
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
!
Glass Passivated Die Construction
!
Ideally Suited for Automatic Assembly
!
Low Forward Voltage Drop, High Efficiency
!
Low Power Loss
!
Ultra-Fast Recovery Time
     
Case
                     

!
  
Plastic
     
Material

has

UL

Flammability
                               
B
           
Classification Rating 94V-O
SMC/DO-214AB
Dim
A
B
C
D
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
Mechanical Data
!
!
!
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.21 grams (approx.)
A
C
D
J
E
G
H
H
G
E
J
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Symbol
US3A US3B
US3D
US3G
US3J US3K US3M
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375
(9.5mm) lead length at T
A
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
1.0
1.30
5.0
250.0
50
75
15.0
-65 to +150
1.70
V
µA
75
ns
pF
C/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal
resistance from junction to lead and from junction to ambient with P.C.B mounted
on 0.3 x 0.3" (8.0 x 8.0 mm) Copper pad area
1 of 2
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