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US5KB PDF Datasheet浏览和下载

型号.:
US5KB
PDF下载:
下载PDF文件
内容描述:
[5.0A patch fast recovery diode 800V SMB series]
文件大小:
523 K
文件页数:
2 Pages
品牌Logo:
品牌名称:
SUNMATE [ SUNMATE electronic Co., LTD ]
PCB Prototype
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 浏览型号US5KB的Datasheet PDF文件第2页 
US5AB - US5MB
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
!
!
!
!
!
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Low Power Loss
Ultra-Fast Recovery Time
         
Material
               
!
  
Plastic

Case
       
has

UL

Flammability
                                            
B
Classification Rating 94V-O
SMB(DO-214AA)
Dim
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
A
B
C
D
Mechanical Data
!
!
!
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
A
C
D
J
E
G
H
J
H
G
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Symbol
US5AB US5BB US5DB US5GB US5JB US5KB US5MB
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375
(9.5mm) lead length at T
A
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=25 C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
5.0
150.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance
Operating junction and storage temperature range
1.0
1.40
10.0
300.0
50
15
15.0
-65 to +150
1.70
V
µA
75
12
ns
pF
C/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
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