2
S
For low-frequency power amplification
For stroboscope
B
Silicon NPN epitaxial planar type
Unit: mm
5.0
±0.2
C
2SD788
4.0
±0.2
5.1
±0.2
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory operation performances at high efficiency with the low-
voltage power supply.
A
0.7
±0.1
K
D
E
G
0.7
±0.2
N
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
20
20
6
2
Unit
V
F
0.45
+0.15
–0.1
H
2.5
+0.6
–0.2
2.5
+0.6
–0.2
F
V
1
L
2 3
2.3
±0.2
C
V
A
1
2
3
DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
1.27
F
G
+0.15
0.85
0.45
–0.1
0.45
H
14.00 + 0.50
J
0.55 MAX
K
2.30
L
M
0.45 MAX
N
1.00
J
12.9
±0.5
6
900
150
−55
to
+150
A
mW
°C
°C
1. EMITTER
2. COLLECTOR
3. BASE
1: Emitter
2: Collector
3: Base
TO-92 Package
M
TO-92
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1.
Rank classification
2.
CLASSIFICATION OF
RANK
RANGE
Conditions
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
16 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
6
V, I
C
=
0
V
CE
= 2 V, I
C
= 0.1A
V
CE
= 2 V, I
C
= 1 A
I
C
=
1
A, I
B
=
0.1 A
V
CB
=
2
V, I
C
= 1 0
mA
V
CB
=
10
V, I
E
=
0, f
=
1 MHz
Min
20
6
Typ
Max
Unit
V
V
µA
µA
µA
2
1
0.2
100
150
0.3
100
20
700
V
CE(sat)
f
T
C
ob
V
MHz
PF
hFE2
A
100-300
.....B
250-500
....C
400-700
1
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
