BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
■
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
TW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
(dI/dt)c (2)
V
D
= 12 V
R
L
= 30
Ω
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
I - III
II
V
D
= 67 %V
DRM
gate open
Tj = 125°C
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Without snubber
Tj = 125°C
Tj = 125°C
Tj = 125°C
MIN.
MIN.
MAX.
10
10
15
20
2.7
1.2
-
15
25
30
40
3.5
2.4
-
5
BTA/BTB06
SW
10
1.3
0.2
35
50
60
400
-
-
3.5
50
70
80
1000
-
-
5.3
V/µs
A/ms
CW
35
BW
50
mA
V
V
mA
mA
Unit
V
D
= V
DRM
R
L
= 3.3 kΩ
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB06
C
I
G
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
R
L
= 30
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
STATIC CHARACTERISTICS
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 5.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
60
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
