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IRF40N03 参数 Datasheet PDF下载

IRF40N03图片预览
型号: IRF40N03
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET [N-CHANNEL Power MOSFET]
分类和应用:
文件页数/大小: 4 页 / 75 K
品牌: SUNTAC [ SUNTAC ELECTRONIC CORP. ]
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IRF40N03
N-C
HANNEL
Power M
OSFET
APPLICATION
Fast Switching
Simple Drive Requirement
Low Gate Charge
V
DSS
30V
R
DS(ON)
Max.
..17.0m
I
D
40A
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
PIN CONFIGURATION
TO-220
SYMBOL
D
Front View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current
Continuous Tc = 25
, V
GS
@10V
Continuous Tc = 100 , V
GS
@10V
Pulsed Tc = 25 , V
GS
@10V (Note 2)
Gate-to-Source Voltage
Total Power Dissipation
Derating Factor above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=144
µ
H,I
D
=40 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
dv/dt
T
J
, T
STG
E
AS
T
L
T
PKG
I
AS
Continue
Symbol
V
DSS
I
D
I
D
I
DM
V
GS
P
D
Value
30
40
30
170
±20
.50
0.4
4.5
-55 to 175
500
300
260
60
A
mJ
V
W
W/
V/ns
Unit
V
A
THERMAL RESISTANCE
Symbol
R
R
JC
Parameter
Junction-to-case
Junction-to-ambient
Min
Typ
Max
2.5
62
Units
JA
/W
Test Conditions
Water cooled heatsink, P
D
adjusted for a peak junction
temperature of +175
1 cubic foot chamber, free air
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