IRF4N60
POWER MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
FEATURES
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Top View
G ATE
SOU RCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
= 25
(V
DD
= 100V, V
GS
= 10V, I
L
= 4A, L = 10mH, R
G
= 25 )
JC
JA
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
4.0
18
±20
±40
96
38
Unit
A
V
V
W
Continue
Non-repetitive
T
J
, T
STG
E
AS
-55 to 150
80
1.70
62
300
mJ
/W
T
L
Page 1
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
