IRF6N40
P
OWER
MOSFET
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
FEATURES
Higher Current Rating
Lower r
DS(ON)
, Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220
SYMBOL
D
Top View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
IRF6N40................................................TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed (Note 1)
Gate-to-Source Voltage
Total Power Dissipation
Derate above 25
Single Pulse Drain-to-Source Avalanche Energy
Operating and Storage Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
= 25
E
AS
T
J
, T
STG
JC
JA
Symbol
I
D
I
DM
V
GS
P
D
Value
6.0
21
±20
96
0.77
180
-55 to 150
1.70
62
300
Unit
A
V
W
W/
mJ
Continue
(V
DD
= 100V, V
GS
= 10V, I
L
= 6A, L = 10mH, R
G
= 25 )
/W
T
L
Page 1
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
