Sidac
Data Sheets
Part No.
(10)
Do
not
use
tab
I
T(RMS)
(6) (7) (8)
V
DRM
V
BO
(1)
I
DRM
I
BO
(2)
I
H
(3) (4)
Type
Pin 1
Pin 3
TO-92
DO-15X
Pin 2
Do not use
DO-214
Amps
MAX
1
1
1
1
1
1
1
1
1
1
1
1
Volts
MIN
±70
±90
±90
±90
±90
±90
±90
±180
±180
±190
±200
±200
MIN
79
95
104
110
120
130
140
190
205
220
240
270
Volts
MAX
97
113
118
125
138
146
170
215
230
250
280
330
µAmps
MAX
5
5
5
5
5
5
5
5
5
5
5
5
µAmps
MAX
10
10
10
10
10
10
10
10
10
10
10
10
mAmps
TYP
60
60
60
60
60
60
60
60
60
60
60
60
MAX
150
150
150
150
150
150
150
150
150
150
150
150
TO-202
See “Package Dimensions” section for variations. (9)
SDB0900E70
SDB1050E70
SDB1100E70
SDB1200E70
SDB1300E70
SDB1400E70
SDB1500E70
SDB2000E70
SDB2200E70
SDB2400E70
SDB2500E70
SDB0900G
SDB1050G
SDB1100G
SDB1200G
SDB1300G
SDB1400G
SDB1500G
SDB2000G
SDB2200G
SDB2400G
SDB2500G
SDB2000F1
SDB2200F1
SDB2400F1
SDB2500F1
SDB3000F1
SDB0900S
SDB1050S
SDB1100S
SDB1200S
SDB1300S
SDB1400S
SDB1500S
SDB2000S
SDB2200S
SDB2400S
SDB2500S
Specific Test Conditions
di/dt
— Critical rate-of-rise of on-state current
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
;
T
J
100 °C
I
BO
— Breakover current 50/60 Hz sine wave
I
DRM
— Repetitive peak off-state current 50/60 Hz sine wave; V = V
DRM
I
H
— Dynamic holding current 50/60 Hz sine wave; R = 100
I
T(RMS)
— On-state RMS current T
J
125 °C 50/60 Hz sine wave
I
TSM
— Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
R
S
— Switching resistance
R
Electrical Specification Notes
(1)
(2)
(3)
(4)
(5)
(6)
See 4 for V
BO
change versus junction temperature.
See 4 for I
BO
versus junction temperature.
See 3 for I
H
versus case temperature.
See 5 for test circuit.
See 3 for more than one full cycle rating.
T
C
90 °C for TO-92 Sidac
T
C
105 °C for TO-202 Sidacs
T
L
100 °C for DO-15X
T
L
90 °C for DO-214
See 5 for clarification of sidac operation.
For best sidac operation, the load impedance should be near or
less than switching resistance.
See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
V
–
V
BO
S
= -------------------------------
50/60 Hz sine wave
-
S
I
–
I
BO
S
(7)
(8)
(9)
V
BO
— Breakover voltage 50/60 Hz sine wave
V
DRM
— Repetitive peak off-state voltage
V
TM
— Peak on-state voltage; I
T
= 1 A
(10) Do not use electrically connected mounting tab or center lead.
+I
General Notes
•
•
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Storage temperature range (T
S
) is -65 °C to +150 °C.
The case (T
C
) or lead (T
L
) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
Junction temperature range (T
J
) is -40 °C to +125 °C.
Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum; 1/16" (1.59 mm) from case.
R
S =
(V
BO
- V
S
)
I
T
I
H
I
S
R
S
-V
I
DRM
I
BO
+V
•
•
V
T
V
BO
V
S
V
DRM
(I
S
- I
BO
)
-I
V-I Characteristics
2
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
