ST1N60
P
OWER
MOSFET
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-251
TO-252
SYMBOL
Front View
Front View
D
SOURCE
G ATE
SO URC E
DRAIN
DR AIN
GATE
G
S
1
2
3
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Total Power Dissipation
TO-251/252
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
= 25
(V
DD
= 100V, V
GS
= 10V, I
AS
= 2A, L = 10mH, R
G
= 25 )
JC
JA
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
1.0
9.0
±30
±40
50
Unit
A
V
V
W
Continue
Non-repetitive
T
J
, T
STG
E
AS
-55 to 150
20
1.0
62.5
260
mJ
/W
T
L
Page 1
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
