STC2222A
NPN Silicon Transistor
General Purpose Transistor
• Collector-Emitter Voltage: V
CEO
= 40V
• Collector Power Dissipation: P
C
(max)=625mW
• Refer STC2222 for graphs
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
75
40
6
600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=0.1mA, V
CE
=10V
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, *I
C
=150mA
V
CE
=10V, *I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=20V, I
C
=20mA
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=30V, I
C
=150mA
I
B1
=15mA, V
BE
(off)=0.5V
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
I
C
=100µA, V
CE
=10V
R
S
=IKΩ, f=1KHz
300
8
35
285
4
0.6
35
50
75
100
40
Min.
75
40
6
0.01
10
Typ.
Max.
Units
V
V
V
µA
nA
300
0.3
1
1.2
2
V
V
V
V
MHz
pF
ns
ns
dB
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
OFF
NF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
*
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
