STC2907A
PNP Silicon Transistor
General Purpose Transistor
• Collector-Emitter Voltage: V
CEO
= 60V
• Collector Power Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Test Condition
I
C
= -10µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -50V, I
E
=0
I
C
= -0.1mA, V
CE
= -10V
V
CE
= -10V, I
C
= -1mA,
V
CE
= -10V , I
C
= -10mA
V
CE
= -10V, *I
C
= -150mA
V
CE
= -10V, *I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CB
= -10V, I
E
=0
f=1MHz
I
C
= -50mA, V
CE
= -20V
f=100MHz
V
CC
= -30V, I
C
= -150mA
I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA
I
B1
=I
B2
= -15mA
200
45
100
75
100
100
100
50
Min.
-60
-60
-5
-10
Typ.
Max.
Units
V
V
V
nA
300
-0.4
-1.6
-1.3
-2.6
8
V
V
V
V
pF
MHz
ns
ns
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
OFF
* Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Output Capacitance
* Current Gain Bandwidth Product
Turn On Time
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
