欢迎访问ic37.com |
会员登录 免费注册
发布采购

STC8050 参数 Datasheet PDF下载

STC8050图片预览
型号: STC8050
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN Silicon Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 89 K
品牌: SUNTAC [ SUNTAC ELECTRONIC CORP. ]
 浏览型号STC8050的Datasheet PDF文件第2页  
S
0
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8550
• Collector Current: I
C
=1.5A
• Collector Power Dissipation: P
C
=2W (T
C
=25°C)
STC8050
NPN Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
40
6
1.5
1
150
65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 100µA, I
E
=0
I
C
= 2mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 35V, I
E
=0
V
EB
= 6V, I
C
=0
V
CE
= 1V, I
C
= 5mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 800mA
I
C
= 800mA, I
B
= 80mA
I
C
= 800mA, I
B
= 80mA
V
CE
= 1V, I
C
= 10mA
V
CB
= 10V, I
E
=0
f=1MHz
V
CE
= 10V, I
C
= -50mA
100
45
85
40
170
160
80
0.28
0.98
0.66
15
200
Min.
40
40
6
100
100
300
0.5
1.2
1.0
V
V
V
pF
MHz
Typ.
Max.
Units
V
V
V
nA
nA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE2
A
85 ~ 160
B
120 ~ 200
C
200 ~ 400